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Characterization of Deep Levels in Si-Doped I n x A l 1- x A s Layers Grown by Molecular Beam Epitaxy
Malinin, Alexei, Tomozawa, Hidemasa, Hashizume, Tamotsu, Hasegawa, HidekiVolume:
34
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.34.1138
Date:
February, 1995
File:
PDF, 763 KB
1995