Buffer controlled GaN nanorods growth on Si(111) substrates...

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures 2006 Vol. 24; Iss. 2

Buffer controlled GaN nanorods growth on Si(111) substrates by plasma-assisted molecular beam epitaxy

C. L. Hsiao, L. W. Tu, T. W. Chi, H. W. Seo, Q. Y. Chen, W. K. Chu
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Volume:
24
Year:
2006
Language:
english
DOI:
10.1116/1.2186342
File:
PDF, 1.57 MB
english, 2006
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