Fabrication of 10-Nanometer-scale GaAs Dot Structures by In...

Japanese Journal of Applied Physics 1995 / 9 Vol. 34; Iss. Part 2, No

Fabrication of 10-Nanometer-scale GaAs Dot Structures by In Situ Selective Gas Etching with Self-Assembled InAs Dots as a Mask

Yusa, Go, Noge, Hiroshi, Kadoya, Yutaka, Someya, Takao, Suga, Tadatomo, Petroff, Pierre, Sakaki, Hiroyuki
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Volume:
34
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.34.l1198
Date:
September, 1995
File:
PDF, 852 KB
1995
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