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High Quality GaN Growth on (0001) Sapphire by Ion-Removed Electron Cyclotron Resonance Molecular Beam Epitaxy and First Observation of (2× 2) and (4× 4) Reflection High Energy Electron Diffraction Patterns
Iwata, Kakuya, Asahi, Hajime, Yu, Soon Jae, Asami, Kumiko, Fujita, Hideki, Fushida, Masahiro, Gonda, Shun-ichiVolume:
35
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.35.l289
Date:
March, 1996
File:
PDF, 870 KB
1996