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ArF-Excimer-Laser-Assisted Highly Selective Etching of InGaAs/InAlAs Using HBr and $\bf F_{2}$ Gas Mixture
Takazawa, Hiroyuki, Takatani, Shinichiro, Yamamoto, SeijiVolume:
35
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.35.l754
Date:
June, 1996
File:
PDF, 446 KB
1996