Effective electron and hole masses in intrinsic and heavily...

Journal of Physics Condensed Matter 2001 / 10 Vol. 13; Iss. 40

Effective electron and hole masses in intrinsic and heavily n-type doped GaN and AlN

Persson, C, Sernelius, Bo E, Silva, A Ferreira da, Ahuja, R, Johansson, B
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Volume:
13
Language:
english
Journal:
Journal of Physics: Condensed Matter
DOI:
10.1088/0953-8984/13/40/305
Date:
October, 2001
File:
PDF, 131 KB
english, 2001
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