Gas Source Molecular Beam Epitaxial Growth of GaN$_{{\bf...

Japanese Journal of Applied Physics 1996 / 12 Vol. 35; Iss. Part 2, No

Gas Source Molecular Beam Epitaxial Growth of GaN$_{{\bf 1}-{\ninmbi x}}$P x ($\mbi{x} \Leq {\bf 0.015}$) Using Ion-Removed Electron Cyclotron Resonance Radical Cell

Iwata, Kakuya, Asahi, Hajime, Asami, Kumiko, Gonda, Shun-ichi
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Volume:
35
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.35.L1634
Date:
December, 1996
File:
PDF, 743 KB
1996
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