Increased Electron Concentration in InAs/AlGaSb...

Japanese Journal of Applied Physics 1997 / 3 Vol. 36; Iss. Part 1, No

Increased Electron Concentration in InAs/AlGaSb Heterostructures Using a Si Planar Doped Ultrathin InAs Quantum Well

Sasa, Shigehiko, Yamamoto, Yoshitaka, Izumiya, Satoshi, Yano, Mitsuaki, Iwai, Yoshio, Inoue, Masataka
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Volume:
36
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.36.1869
Date:
March, 1997
File:
PDF, 492 KB
1997
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