Fully Strained Heavily Carbon-Doped GaAs Grown by...

Fully Strained Heavily Carbon-Doped GaAs Grown by Gas-Source Molecular Beam Epitaxy Using Carbontetrabromide and Its Application to InGaP/GaAs Heterojunction Bipolar Transistors

Ouchi, Kiyoshi, Mishima, Tomoyoshi, Mochizuki, Kazuhiro, Oka, Tohru, Tanoue, Tomonori
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
36
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.36.1866
Date:
March, 1997
File:
PDF, 540 KB
1997
Conversion to is in progress
Conversion to is failed