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Fully Strained Heavily Carbon-Doped GaAs Grown by Gas-Source Molecular Beam Epitaxy Using Carbontetrabromide and Its Application to InGaP/GaAs Heterojunction Bipolar Transistors
Ouchi, Kiyoshi, Mishima, Tomoyoshi, Mochizuki, Kazuhiro, Oka, Tohru, Tanoue, TomonoriVolume:
36
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.36.1866
Date:
March, 1997
File:
PDF, 540 KB
1997