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InAlAs/InGaAs HEMTs with Uniform Threshold Voltage Fabricated by Selective Wet-Etching Using Adipic Acid
Higuchi, Katsuhiko, Uchiyama, Hiroyuki, Shiota, Takashi, Kudo, Makoto, Mishima, TomoyoshiVolume:
36
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.36.1822
Date:
March, 1997
File:
PDF, 753 KB
1997