Realization of Highly Resistive GaAs/Si Interface and Improvement of RF Performance for High Electron-Mobility Transistors Grown on Si Substrates
Miyagaki, Shinji, Hara, Naoki, Harada, Naoki, Eshita, Takashi, Hikosaka, Kohki, Tanaka, HitoshiVolume:
36
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.36.2022
Date:
April, 1997
File:
PDF, 880 KB
1997