Enhancement of the Breakdown Voltage of...

Japanese Journal of Applied Physics 1997 / 4 Vol. 36; Iss. Part 1, No

Enhancement of the Breakdown Voltage of G a A s / A l x G a 1- x A s Heterostructures for GaAs Metal-Semiconductor Field Effect Transistors Grown by Metalorganic Chemical Vapor Deposition

Mohri, Mikio, Kakinuma, Hiroaki, Ueda, Takashi, Akiyama, Masahiro
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Volume:
36
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.36.2010
Date:
April, 1997
File:
PDF, 1.19 MB
1997
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