2 S/mm Transconductance InAs-Inserted-Channel Modulation...

Japanese Journal of Applied Physics 1997 / 4 Vol. 36; Iss. Part 2, No

2 S/mm Transconductance InAs-Inserted-Channel Modulation Doped Field Effect Transistors with a Very Close Gate-to-Channel Separation of 14.5 nm

Xu, Dong, Heiß, Heiner, Sexl, Markus, Kraus, Stefan, Böhm, Gerhard, Tränkle, Günther, Weimann, Günter, Abstreiter, Gerhard
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Volume:
36
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.36.L470
Date:
April, 1997
File:
PDF, 557 KB
1997
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