Characteristics of Nonalloyed Pseudomorphic High Electron...

Japanese Journal of Applied Physics 1997 / 6 Vol. 36; Iss. Part 1, No

Characteristics of Nonalloyed Pseudomorphic High Electron Mobility Transistors Using InAs/ I n x G a 1- x A s ( x =1→0 )/ A l y G a 1- y

Chen, Sheu-Shung, Lin, Chien-Cheng, Lan, Wen-Ho, Tu, Sun-Li, Peng, Chin-Kun
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Volume:
36
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.36.3443
Date:
June, 1997
File:
PDF, 794 KB
1997
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