InGaN Light-Emitting Diodes with Multiple-Porous GaN...

ECS Journal of Solid State Science and Technology 2014 / 08 Vol. 3; Iss. 10

InGaN Light-Emitting Diodes with Multiple-Porous GaN Structures Fabricated through a Photoelectrochemical Etching Process

Huang, K.-P., Wu, K.-C., Fan, F.-H., Tseng, W.-P., Shieh, B.-C., Chen, S.-H., Lin, C.-F.
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Volume:
3
Language:
english
Journal:
ECS Journal of Solid State Science and Technology
DOI:
10.1149/2.0131410jss
Date:
August, 2014
File:
PDF, 994 KB
english, 2014
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