Advantages of the Asymmetric Tunnel Barrier for High-Density Integration of Single Electron Devices
Matsumoto, Yoshinari, Hanajiri, Taturo, Toyabe, Tohru, Sugano, TakuoVolume:
36
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.36.4143
Date:
June, 1997
File:
PDF, 620 KB
1997