Growth of GaN on GaAs(111)B by Metalorganic Hydrogen...

Japanese Journal of Applied Physics 1997 / 9 Vol. 36; Iss. Part 2, No

Growth of GaN on GaAs(111)B by Metalorganic Hydrogen Chloride VPE Using Double Buffer Layer

Takahashi, Naoyuki, Matsuki, Shiroshi, Koukitu, Akinori, Seki, Hisashi
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Volume:
36
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.36.l1133
Date:
September, 1997
File:
PDF, 459 KB
1997
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