Optimization of InGaAsP–InP tensile strained multiple...

Semiconductor Science and Technology 2004 / 06 Vol. 19; Iss. 6

Optimization of InGaAsP–InP tensile strained multiple quantum-well structures emitting at 1.34 µm

Jin, Jinyan, Shi, Jing, Tian, Decheng
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Volume:
19
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/19/6/014
Date:
June, 2004
File:
PDF, 215 KB
english, 2004
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