Width of Raman Line from Porous Silicon Independent of...

International Journal of Nanoscience 2003 / 02 Vol. 2; Iss. 1n2

Width of Raman Line from Porous Silicon Independent of Total Charge Consumed During Anodization

Ohmukai, Masato, Taniguchi, Masaki, Tsutsumi, Yasuo
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Volume:
2
Language:
english
Journal:
International Journal of Nanoscience
DOI:
10.1142/S0219581X0300105X
Date:
February, 2003
File:
PDF, 139 KB
english, 2003
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