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Continuous analytic I — V model for GS DG MOSFETs including hot-carrier degradation effects
Bentrcia, Toufik, Djeffal, Faycal, Benhaya, Abdel HamidVolume:
33
Language:
english
Journal:
Journal of Semiconductors
DOI:
10.1088/1674-4926/33/1/014001
Date:
January, 2012
File:
PDF, 296 KB
english, 2012