Empirical Data of the Metal-Ferroelectric-Semiconductor...

Integrated Ferroelectrics 2014 / 10 Vol. 157; Iss. 1

Empirical Data of the Metal-Ferroelectric-Semiconductor Field Effect Transistor Polarization and Channel Resistance for Timing and Retention Analysis

Hunt, Mitchell R., McCartney, Crystal L., Mitchell, Cody, Evans, Joseph, Ho, Fat D.
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Volume:
157
Language:
english
Journal:
Integrated Ferroelectrics
DOI:
10.1080/10584587.2014.911612
Date:
October, 2014
File:
PDF, 952 KB
english, 2014
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