Carbon Diffusion Behavior in a GaAs Tunnel Junction with a...

Japanese Journal of Applied Physics 1997 / 10 Vol. 36; Iss. Part 1, No

Carbon Diffusion Behavior in a GaAs Tunnel Junction with a Heavily Carbon Doped p + -Layer by Metalorganic Molecular Beam Epitaxy

Oh, Je-Hwan, Hayakawa, Nobuhiro, Konagai, Makoto
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Volume:
36
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.36.6300
Date:
October, 1997
File:
PDF, 355 KB
1997
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