Normally-off GaN MIS-HEMT using a combination of...

physica status solidi (a) 2015 / 05 Vol. 212; Iss. 5

Normally-off GaN MIS-HEMT using a combination of recessed-gate structure and CF 4 plasma treatment

Park, Youngrak, Kim, Jungjin, Chang, Woojin, Jung, Dongyun, Bae, Sungbum, Mun, Jaekyung, Jun, Chi-Hoon, Ko, Sangchoon, Nam, Eunsoo
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Volume:
212
Language:
english
Journal:
physica status solidi (a)
DOI:
10.1002/pssa.201431737
Date:
May, 2015
File:
PDF, 949 KB
english, 2015
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