MOS modelling by analytical approximations. I. Subthreshold...

International Journal of Electronics 1979 / 01 Vol. 46; Iss. 1

MOS modelling by analytical approximations. I. Subthreshold current and threshold voltage

FICHTNER, W., PÖTZL, H. W.
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Volume:
46
Language:
english
Journal:
International Journal of Electronics
DOI:
10.1080/00207217908900964
Date:
January, 1979
File:
PDF, 462 KB
english, 1979
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