Influencs of Surface V/III Ratio on the Film Quality during...

Japanese Journal of Applied Physics 1998 / 6 Vol. 37; Iss. Part 2, No

Influencs of Surface V/III Ratio on the Film Quality during the GaN Growth in Gas-Source Molecular Beam Epitaxy

Shen, Xu-Qiang, Tanaka, Satoru, Iwai, Sohachi, Aoyagi, Yoshinobu
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Volume:
37
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.37.L637
Date:
June, 1998
File:
PDF, 252 KB
english, 1998
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