Selective Area Growth of GaN Using Tungsten Mask by...

Japanese Journal of Applied Physics 1998 / 7 Vol. 37; Iss. Part 2, No

Selective Area Growth of GaN Using Tungsten Mask by Metalorganic Vapor Phase Epitaxy

Kawaguchi, Yasutoshi, Nambu, Shingo, Sone, Hiroki, Shibata, Takumi, Matsushima, Hidetada, Yamaguchi, Masahito, Miyake, Hideto, Hiramatsu, Kazumasa, Sawaki, Nobuhiko
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Volume:
37
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.37.L845
Date:
July, 1998
File:
PDF, 660 KB
english, 1998
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