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Temperature-Dependent Behavior of 4H-Silicon Carbide Surface Morphology Etched Using Chlorine Trifluoride Gas
Habuka, Hitoshi, Tanaka, Keiko, Katsumi, Yusuke, Takechi, Naoto, Fukae, Katsuya, Kato, TomohisaVolume:
156
Year:
2009
Language:
english
Journal:
Journal of The Electrochemical Society
DOI:
10.1149/1.3243878
File:
PDF, 808 KB
english, 2009