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Effect of InGaAs interlayer on the properties of GaAs grown on Si (111) substrate by molecular beam epitaxy
Wen, Lei, Gao, Fangliang, Zhang, Xiaona, Zhang, Shuguang, Li, Jingling, Guan, Yunfang, Wang, Wenliang, Zhou, Shizhong, Lin, Zhiting, Li, GuoqiangVolume:
116
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4902160
Date:
November, 2014
File:
PDF, 2.24 MB
english, 2014