Growth of Heavily Indium Doped Si Crystals by Co-Doping of...

Key Engineering Materials 2012 / 3 Vol. 508

Growth of Heavily Indium Doped Si Crystals by Co-Doping of Neutral Impurity Carbon or Germanium

Inoue, Kaihei, Tokumoto, Yuki, Kutsukake, Kentaro, Ohno, Yutaka, Yonenaga, Ichiro
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Volume:
508
Language:
english
Journal:
Key Engineering Materials
DOI:
10.4028/www.scientific.net/kem.508.220
Date:
March, 2012
File:
PDF, 433 KB
english, 2012
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