GaN Schottky Barrier Diodes with High-Resistivity Edge Termination Formed by Boron Implantation
Xu, Wei-Zong, Fu, Li-Hua, Lu, Hai, Ren, Fang-Fang, Chen, Dun-Jun, Zhang, Rong, Zheng, You-DouVolume:
30
Language:
english
Journal:
Chinese Physics Letters
DOI:
10.1088/0256-307X/30/5/057303
Date:
May, 2013
File:
PDF, 606 KB
english, 2013