CHANNELING ANALYSIS OF Ge EPITAXIAL LAYER ON Si SUBSTRATE...

International Journal of PIXE 1992 / 01 Vol. 2; Iss. 2

CHANNELING ANALYSIS OF Ge EPITAXIAL LAYER ON Si SUBSTRATE AND DOPED Ga ATOMS BY USING RBS AND PIXE METHODS

TANAKA, KOKI, YAGI, EIICHI, KAWAKAMI, KAZUTO, ONO, AKIHIRO
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Volume:
2
Language:
english
Journal:
International Journal of PIXE
DOI:
10.1142/S0129083592000130
Date:
January, 1992
File:
PDF, 542 KB
english, 1992
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