Strained GeSn p-Channel...

IEEE Transactions on Electron Devices 2014 / 11 Vol. 61; Iss. 11

Strained GeSn p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors With In Situ Si2H6 Surface Passivation: Impact of Sn Composition

Liu, Yan, Yan, Jing, Wang, Hongjuan, Zhang, Qingfang, Liu, Mingshan, Zhao, Bin, Zhang, Chunfu, Cheng, Buwen, Hao, Yue, Han, Genquan
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Volume:
61
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/ted.2014.2357446
Date:
November, 2014
File:
PDF, 3.85 MB
english, 2014
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