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Uniformity of the High Electron Mobility Transistors and Resonant Tunneling Diodes Integrated on an InP Substrate Using an Epitaxial Structure Grown by Molecular Beam Epitaxy and Metalorganic Chemical Vapor Deposition
Maezawa, Koichi, Osaka, Jiro, Yokoyama, Haruki, Yamamoto, MasafumiVolume:
37
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.37.5500
Date:
October, 1998
File:
PDF, 586 KB
1998