Optical Properties of InGaN/GaN Quantum Wells with Si Doped...

Japanese Journal of Applied Physics 1998 / 11 Vol. 37; Iss. Part 2, No

Optical Properties of InGaN/GaN Quantum Wells with Si Doped Barriers

Minsky, Milan S., Chichibu, Shigefusa, Fleischer, Siegfried B., Abare, Amber C., Bowers, John E., Hu, Evelyn L., Keller, Stacia, Mishra, Umesh K., DenBaars, Steven P.
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Volume:
37
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.37.L1362
Date:
November, 1998
File:
PDF, 72 KB
english, 1998
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