EFFECTIVE GaN SURFACE PASSIVATION BY PLASMA ENHANCED...

International Journal of Nanoscience 2012 / 08 Vol. 11; Iss. 4

EFFECTIVE GaN SURFACE PASSIVATION BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION OF SILICON OXIDE

CHAKROUN, A., JAOUAD, A., GIGUÈRE, A., AIMEZ, V., ARÈS, R.
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Volume:
11
Language:
english
Journal:
International Journal of Nanoscience
DOI:
10.1142/S0219581X12400236
Date:
August, 2012
File:
PDF, 932 KB
english, 2012
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