Characterization of Nonuniformity of 6H-SiC Wafers by...

Japanese Journal of Applied Physics 1999 / 4 Vol. 38; Iss. Part 2, No

Characterization of Nonuniformity of 6H-SiC Wafers by Photoluminescence Mapping at Room Temperature

Tajima, Michio, Nakane, Taketomo, Nakata, Toshitake, Watanabe, Masanori
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Volume:
38
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.38.L414
Date:
April, 1999
File:
PDF, 81 KB
english, 1999
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