High-Power 0.8 µm InGaAsP/InGaP/AlGaAs Single Quantum Well...

Japanese Journal of Applied Physics 1999 / 4 Vol. 38; Iss. Part 2, No

High-Power 0.8 µm InGaAsP/InGaP/AlGaAs Single Quantum Well Lasers with Tensile-Strained InGaP Barriers

Fukunaga, Toshiaki, Wada, Mitsugu, Hayakawa, Toshiro
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Volume:
38
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.38.l387
Date:
April, 1999
File:
PDF, 147 KB
english, 1999
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