Low-Noise Bias Reliability of AlInAs/GaInAs Modulation-Doped Field Effect Transistors with Linearly Graded Low-Temperature Buffer Layers Grown on GaAs Substrates
Wakita, Arlene, Rohdin, Hans, Robbins, Virginia, Moll, Nick, Su, Chung-Yi, Nagy, Avelina, Basile, DavidVolume:
38
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.38.1186
Date:
February, 1999
File:
PDF, 249 KB
english, 1999