High Power Operations of 980 nm Ga 0.8...

Japanese Journal of Applied Physics 1999 / 8 Vol. 38; Iss. Part 1, No

High Power Operations of 980 nm Ga 0.8 In 0.2 As/Ga x In 1- x As y P 1- y /Ga 0.51 In 0.49 P/GaAs Pump Lasers Prepared by Multi-step Metalorganic Vapor Phase Epitaxial Growth with Ion Impl

Jang, Dong Hoon, Lee, Jung Kee, Park, Kyung, Cho, Ho Sung, Nam, Eun Soo, Park, Chul, Shim, Jong In, Jeong, Ji Chai, Jeong, Ki, Park, Soo Jin
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Volume:
38
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.38.4756
Date:
August, 1999
File:
PDF, 2.56 MB
english, 1999
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