Control of emitter current crowding in bipolar junction...

Control of emitter current crowding in bipolar junction transistors using laterally-graded base doping profiles

BULUCEA, CONSTANTIN
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Volume:
74
Language:
english
Journal:
International Journal of Electronics
DOI:
10.1080/00207219308925858
Date:
April, 1993
File:
PDF, 710 KB
english, 1993
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