DC Characteristics in High-Quality AlGaN/AlN/GaN...

Japanese Journal of Applied Physics 2005 / 9 Vol. 44; Iss. 9A

DC Characteristics in High-Quality AlGaN/AlN/GaN High-Electron-Mobility Transistors Grown on AlN/Sapphire Templates

Miyoshi, Makoto, Imanishi, Atsushi, Egawa, Takashi, Ishikawa, Hiroyasu, Asai, Kei-ichiro, Shibata, Tomohiko, Tanaka, Mitsuhiro, Oda, Osamu
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Volume:
44
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.44.6490
Date:
September, 2005
File:
PDF, 139 KB
english, 2005
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