Γ-X mixing in resonant tunnelling through GaAs-AlAs heterostructures and the X valley electron generator
Fangshi, XueVolume:
4
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/4/3/004
Date:
March, 1989
File:
PDF, 516 KB
english, 1989