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Enhancement-Mode Insulating-Gate AlInN/AlN/GaN Heterostructure Field-Effect Transistors with Threshold Voltage in Excess of +1.5 V
Morgan, Daniel, Sultana, Mahbuba, Fatima, Husna, Sugiyama, Sho, Fareed, Qhalid, Adivarahan, Vinod, Lachab, Mohamed, Khan, AsifVolume:
4
Language:
english
Journal:
Applied Physics Express
DOI:
10.1143/apex.4.114101
Date:
October, 2011
File:
PDF, 684 KB
english, 2011