Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures
2005 Vol. 23; Iss. 6
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Line edge roughness characterization with a three-dimensional atomic force microscope: Transfer during gate patterning processes
J. Thiault, J. Foucher, J. H. Tortai, O. Joubert, S. Landis, S. PauliacVolume:
23
Year:
2005
Language:
english
DOI:
10.1116/1.2101789
File:
PDF, 759 KB
english, 2005