Study on quaternary AlInGaN/GaN HFETs grown on sapphire substrates
Ketteniss, N, Khoshroo, L Rahimzadeh, Eickelkamp, M, Heuken, M, Kalisch, H, Jansen, R H, Vescan, AVolume:
25
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/25/7/075013
Date:
July, 2010
File:
PDF, 1.30 MB
english, 2010