Influence of net doping, excess carrier density and annealing on the boron oxygen related defect density in compensated n-type silicon
Rougieux, F. E., Lim, B., Schmidt, J., Forster, M., Macdonald, D., Cuevas, A.Volume:
110
Year:
2011
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3633492
File:
PDF, 772 KB
english, 2011