The magnetoresistance ratio of an MTJ device and the...

Journal of Magnetism and Magnetic Materials 2006 Vol. 304; Iss. 1

The magnetoresistance ratio of an MTJ device and the influence of ramping DC bias voltage rate measured by conducting atomic force microscope

Min-Fong Shu, A. Canizo-Cabrera, Chih-Cheng Hsu, C.C. Chen, J.C. Wu, Chao-Chen Yang, Te-ho Wu
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Volume:
304
Year:
2006
Language:
english
Pages:
1
DOI:
10.1016/j.jmmm.2006.02.248
File:
PDF, 130 KB
english, 2006
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