Characteristics of solution gated field effect transistors...

Journal of Physics D Applied Physics 2010 / 09 Vol. 43; Iss. 34

Characteristics of solution gated field effect transistors on the basis of epitaxial graphene on silicon carbide

Ristein, Jürgen, Zhang, Wenying, Speck, Florian, Ostler, Markus, Ley, Lothar, Seyller, Thomas
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Volume:
43
Language:
english
Journal:
Journal of Physics D: Applied Physics
DOI:
10.1088/0022-3727/43/34/345303
Date:
September, 2010
File:
PDF, 630 KB
english, 2010
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