High resolution electron microscopy of dissociated...

High resolution electron microscopy of dissociated dislocations in silicon with a normal-incident electron beam

Suzuki, K., Maeda, N., Takeuchi, S.
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Volume:
73
Language:
english
Journal:
Philosophical Magazine A
DOI:
10.1080/01418619608244392
Date:
February, 1996
File:
PDF, 959 KB
english, 1996
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