Profile control of high aspect ratio trenches of silicon....

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures 2002 Vol. 20; Iss. 4

Profile control of high aspect ratio trenches of silicon. I. Effect of process parameters on local bowing

M. Boufnichel, S. Aachboun, F. Grangeon, P. Lefaucheux, P. Ranson
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Volume:
20
Year:
2002
Language:
english
DOI:
10.1116/1.1495505
File:
PDF, 452 KB
english, 2002
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